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? semiconductor components industries, llc, 2006 march, 2006 ? rev. 6 1 publication order number: dta114eet1/d dta114eet1 series preferred devices bias resistor transistors pnp silicon surface mount transistors with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sc?75/sot?416 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space ? reduces component count ? the sc?75/sot?416 package can be soldered using wave or reflow. the modified gull?winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? pb?free packages are available maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics rating symbol value unit total device dissipation, fr?4 board (note 1) @ t a = 25 c derate above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 600 c/w total device dissipation, fr?4 board (note 2) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 400 c/w junction and storage temperature range t j , t stg ?55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr?4 @ minimum pad. 2. fr?4 @ 1.0 1.0 inch pad. sc?75 (sot?416) case 463 style 1 preferred devices are recommended choices for future use and best overall value. pnp silicon bias resistor transistors 3 2 1 pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 marking diagram xx m http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information xx = specific device code xx = (refer to page 2) m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location.
dta114eet1 series http://onsemi.com 2 ordering information and resistor values device marking r1 (k) r2 (k) package shipping ? dta114eet1 6a 10 10 sc?75 3000 tape & reel dta114eet1g sc?75 (pb?free) 3000 tape & reel dta124eet1 6b 22 22 sc?75 3000 tape & reel dta124eet1g sc?75 (pb?free) 3000 tape & reel dta144eet1 6c 47 47 sc?75 3000 tape & reel dta144eet1g sc?75 (pb?free) 3000 tape & reel dta114yet1 6d 10 47 sc?75 3000 tape & reel dta114yet1g sc?75 (pb?free) 3000 tape & reel dta114tet1 6e 10 sc?75 3000 tape & reel dta114tet1g sc?75 (pb?free) 3000 tape & reel dta143tet1 6f 4.7 sc?75 3000 tape & reel dta143tet1g sc?75 (pb?free) 3000 tape & reel dta123eet1 6h 2.2 2.2 sc?75 3000 tape & reel dta123eet1g sc?75 (pb?free) 3000 tape & reel dta143eet1 43 4.7 4.7 sc?75 3000 tape & reel dta143eet1g sc?75 (pb?free) 3000 tape & reel dta143zet1 6k 4.7 47 sc?75 3000 tape & reel DTA143ZET1G sc?75 (pb?free) 3000 tape & reel dta124xet1 6l 22 47 sc?75 3000 tape & reel dta124xet1g sc?75 (pb?free) 3000 tape & reel dta123jet1 6m 2.2 47 sc?75 3000 tape & reel dta123jet1g sc?75 (pb?free) 3000 tape & reel dta115eet1 6n 100 100 sc?75 3000 tape & reel dta115eet1g sc?75 (pb?free) 3000 tape & reel dta144wet1 6p 47 22 sc?75 3000 tape & reel dta144wet1g sc?75 (pb?free) 3000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
dta114eet1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector?emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter?base cutoff current dta114eet1 (v eb = 6.0 v, i c = 0) dta124eet1 dta144eet1 dta114yet1 dta114tet1 dta143tet1 dta123eet1 dta143eet1 dta143zet1 dta124xet1 dta123jet1 dta115eet1 dta144wet1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector?base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector?emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0% electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics (note 4) dc current gain dta114eet1 (v ce = 10 v, i c = 5.0 ma) dta124eet1 dta144eet1 dta114yet1 dta114tet1 dta143tet1 dta123eet1 dta143eet1 dta143zet1 dta124xet1 dta123jet1 dta115eet1 dta144wet1 h fe 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 250 250 15 27 140 130 140 150 140 ? ? ? ? ? ? ? ? ? ? ? ? ? ? collector?emitter saturation voltage (i c = 10 ma, i e = 0.3 ma) (i c = 10 ma, i b = 5 ma) dta123eet1 (i c = 10 ma, i b = 1 ma) dta114tet1/dta143tet1 dta143zet1/dta124xet1 dta143eet1 v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) dta114eet1 dta124eet1 dta114yet1 dta114tet1 dta143tet1 dta123eet1 dta143eet1 dta143zet1 dta124xet1 dta123jet1 (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) dta144eet1 (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ) dta115eet1 (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ) dta144wet1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 5. pulse test: pulse width < 300 s, duty cycle < 2.0%
dta114eet1 series http://onsemi.com 4 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 6) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) dta114tet1 dta143tet1 dta123eet1 dta143eet1 v oh 4.9 ? ? vdc input resistor dta114eet1 dta124eet1 dta144eet1 dta114yet1 dta114tet1 dta143tet1 dta123eet1 dta143eet1 dta143zet1 dta124xet1 dta123jet1 dta115eet1 dta144wet1 r1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio dta114eet1/dta124eet1 dta144eet1/dta115eet1 dta114yet1 dta114tet1/dta143tet1 dta123eet1/dta143eet1 dta143zet1 dta124xet1 dta123jet1 dta144wet1 r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 ? 6. pulse test: pulse width < 300 s, duty cycle < 2.0%
dta114eet1 series http://onsemi.com 5 figure 1. derating curve 250 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 600 c/w 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) figure 2. normalized thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
dta114eet1 series http://onsemi.com 6 typical electrical characteristics ? dta114eet1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 3. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =?25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 4. dc current gain figure 5. output capacitance figure 6. output current versus input voltage figure 7. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c ?25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =?25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =?25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
dta114eet1 series http://onsemi.com 7 typical electrical characteristics ? dta123eet1 75 c 25 c ?25 c figure 8. v ce(sat) versus i c figure 9. dc current gain figure 10. output capacitance figure 11. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 12. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 10 0 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 12 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 10 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 0 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
dta114eet1 series http://onsemi.com 8 typical electrical characteristics ? dta124eet1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 13. v ce(sat) versus i c figure 14. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 15. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =?25 c 75 c 100 10 1 0.1 40 50 figure 16. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 17. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =?25 c 50 010 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c ?25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =?25 c v o = 5 v
dta114eet1 series http://onsemi.com 9 typical electrical characteristics ? dta144eet1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 18. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts ) figure 19. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) ?25 c figure 20. output capacitance figure 21. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) ?25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 22. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =?25 c 25 c 75 c 50 i c /i b = 10 t a =?25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v
dta114eet1 series http://onsemi.com 10 typical electrical characteristics ? dta114yet1 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 23. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 24. dc current gain 1 10 100 i c , collector current (ma) figure 25. output capacitance figure 26. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 27. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 ?25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c load +12 v figure 28. inexpensive, unregulated current sourc e typical application for pnp brts 25 c i c /i b = 10 t a =?25 c t a =75 c 25 c ?25 c v o = 5 v v o = 0.2 v 25 c t a =?25 c 75 c 75 c
dta114eet1 series http://onsemi.com 11 typical electrical characteristics ? dta115eet1 75 c 25 c ?25 c figure 29. maximum collector voltage versus collector current figure 30. dc current gain figure 31. output capacitance figure 32. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 33. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 10 0 10 1 100 10 1 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized ) 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 1 0 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = ?25 c v ce = 10 v 75 c 25 c t a = ?25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = ?25 c f = 1 mhz i e = 0 v t a = 25 c
dta114eet1 series http://onsemi.com 12 typical electrical characteristics ? dta144wet1 figure 34. maximum collector voltage versus collector current figure 35. dc current gain figure 36. output capacitance figure 37. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 38. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 10 0 10 1 100 10 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized ) 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 1 1 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = ?25 c v o = 5 v 75 c 25 c t a = ?25 c v o = 0.2 v 75 c 25 c t a = ?25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = ?25 c
dta114eet1 series http://onsemi.com 13 package dimensions sc?75/sot?416 case 463?01 issue f style 1: pin 1. base 2. emitter 3. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ?e? ?d? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 dta114eet1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

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